| PART |
Description |
Maker |
| IS62WV51216BLL-55BLI IS62WV51216ALL-70XI IS62WV512 |
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 45 ns, PBGA48
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 12k × 16低电压，超低功耗的CMOS静态RAM
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 55 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| AM29SL800DT90EI AM29SL800DT90WCC AM29SL800DT90WAC |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 512K X 16 FLASH 1.8V PROM, 90 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 512K X 16 FLASH 1.8V PROM, 90 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 512K X 16 FLASH 1.8V PROM, 120 ns, PBGA48
|
Advanced Micro Devices, Inc.
|
| BS616LV8010 BS616LV8010FIP55 BS616LV8010FIP70 BS61 |
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
LM5010A High Voltage 1A Step Down Switching Regulator; Package: TSSOP EXP PAD; No of Pins: 14
From old datasheet system
Asynchronous 8M(512Kx16) bits Static RAM
LM5010A High Voltage 1A Step Down Switching Regulator; Package: LLP; No of Pins: 10 非常低功电压CMOS SRAM的为512k × 16
Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
FLEX CONNECTOR, 12 POSN., SMT, R/A, W/EXT. SLIDER, ZIF, TAPE & REEL PKG. RoHS Compliant: Yes
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| EM620FU16AS-70L EM620FU16AU-45L EM620FU16AU-70L EM |
512K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
http://
List of Unclassifed Manufacturers
Emerging Memory & Logic Solutions Inc
ETC
List of Unclassifed Manufac...
List of Unclassifed Man...
|
| EM6163FR32AS-45L EM6163FU16AS-45L EM6163FV8AS-45L |
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
|
| K6F8016R6B K6F8016R6B-F |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| DSK6F8016U6C |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
Samsung semiconductor
|
| BS616LV8023BC BS616LV8023BI BS616LV8023 |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
|
BSI[Brilliance Semiconductor]
|
| BS616UV8010BI BS616UV8010 BS616UV8010BC |
Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
|
BSI[Brilliance Semiconductor]
|
| 89LV1632RPQK-30 |
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 16兆位12k × 32的位）低压亿立方米的SRAM
|
Maxwell Technologies, Inc
|
| BS616LV4021 BS616LV4021BC BS616LV4021BI BS616LV402 |
Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
|
BSI[Brilliance Semiconductor]
|
| 27L4000-25 27L4000-20 |
4M-BIT [512K x8] LOW VOLTAGE OPERATION CMOS EPROM 4分位[12k x8]低电压工作的CMOS存储
|
Macronix International Co., Ltd.
|
